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Mid Level (5-10 years) and Senior Level (15+ years)

We are looking for High Power Amplifier Design Engineers for the design of Discrete and Hybrid PAs using GaAs HBT/pHEMT or GaN HEMT devices for Defense and/or Wireless Infrastructure applications.  Need strong HPA Design and Test background at the transistor or module level including GaAs, GaN or LDMOS Transistor or Module design, high frequency MMIC PA or SSPA design.  Key technologies involved in these PAs are Low Impedance, High Power Transistors, Chip & Wire and Soft PC Board. 

Primary focus is to design, test and evaluate leading edge products using GaAs, GaN or LDMOS technology.  This work will involve the design of both discrete and hybrid high power amplifiers using RF CAD software with both linear and non-linear models.  The position will require the individual to work closely with device engineers, product engineers, manufacturing personnel, sales and marketing staff for successful and timely product introduction.  The successful candidate will be a resourceful problem solver that is able to work around technical obstacles and will be adept at the implementation of practical solutions.

BSEE required (MSEE preferred) and 5+ years circuit design experience with at least 3 years of compound semiconductor hybrid or MMIC high power amplifier experience. 

U. S. Citizenship or Permanent Residency Required, Active Security Clearance a plus.

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